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| N-CHANNEL 700 V - 6 - 1.6 A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET Table 1: General Features TYPE STD2NK70Z STD2NK70Z-1 s s s s s s STD2NK70Z - STD2NK70Z-1 Figure 1: Package ID 1.6 A 1.6 A Pw 45 W 45 W 7 7 VDSS 700 V 700 V RDS(on) TYPICAL RDS(on) = 6 EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 2 1 3 DPAK IPAK DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high vltage MOSFETs including revolutionary MDmeshTM products. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s FLYBACK CONFIGURATION FOR BATTERY CHARGER s Figure 2: Internal Schematic Diagram Table 2: Order Codes Sales Type STD2NK70ZT4 STD2NK70Z-1 Marking D2NK70Z D2NK70Z Package DPAK IPAK Packaging TAPE & REEL TUBE Rev. 2 January 2005 1/12 STD2NK70Z - STD2NK70Z-1 Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM(*) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (R GS = 20 K) Gate- source Voltage Drain Current (continuous) at T C = 25C Drain Current (continuous) at T C = 100C Drain Current (pulsed) Total Dissipation at T C = 25C Derating Factor Gate source ESD (HBM-C = 100pF, R = 1.5 K) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 700 700 30 1.6 1 6.4 45 0.36 2000 4.5 -55 to 150 Unit V V V A A A W W/C V V/ns C (*) Pulse width limited by safe operating area (1) ISD 1.6 A, di/dt 200 A/s, VDD V(BR)DSS Table 4: Thermal Data Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.78 100 300 C/W C/W C Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR , VDD = 50 V) Max Value 1.6 110 Unit A mJ Table 6: Gate-Source Zener Diode Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Condition Min. 30 Typ. Max Unit A Igs= 1mA (Open Drain) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STD2NK70Z - STD2NK70Z-1 TABLE 7: ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) On /Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (V DS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125C VGS = 20 V VDS = VGS, ID = 50 A VGS = 10 V, ID = 0.8 A 3 3.75 6 Min. 700 1 50 10 4.5 7 Typ. Max. Unit V A A A V Table 8: Dynamic Symbol gfs (1) Coss eq.(3) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Equivalent Output Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 0.8 A VGS = 0 V, VDS = 0 to 560 V VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 1.4 17 280 35 6.5 7 17 20 35 11.4 2 6.8 15 pF pF pF ns ns ns ns nC nC nC Max. Unit S VDD = 350 V, ID = 0.8 A, RG = 4.7 , VGS = 10 V (see Figure 17) VDD = 560 V, ID = 0.8 A, VGS = 10 V (see Figure 20) Table 9: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 1.6 A, VGS = 0 I SD = 1.6, di/dt = 100 A/s VDD =50 V, T j = 25C (see Figure 18) I SD = 1.6, di/dt = 100 A/s VDD = 50 V, T j = 150C (see Figure 18) 334 918 5.5 350 1050 6 Test Conditions Min. Typ. Max. 1.6 6.4 1.6 Unit A A V ns C A ns C A (1) Pulsed: Pulse duration = 300 s, duty cycle 1.5% (2) Pulse width limited by safe operating area (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 3/12 STD2NK70Z - STD2NK70Z-1 Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/12 STD2NK70Z - STD2NK70Z-1 Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Dource-Drain Diode Forward Characteristics Figure 14: Normalized Breakdown Voltage vs Temperature 5/12 STD2NK70Z - STD2NK70Z-1 Figure 15: Maximum Avalanche Energy vs Temperature 6/12 STD2NK70Z - STD2NK70Z-1 Figure 16: Unclamped Inductive Load Test Circuit Figure 19: Unclamped Inductive Wafeform Figure 17: Switching Times Test Circuit For Resistive Load Figure 20: Gate Charge Test Circuit Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/12 STD2NK70Z - STD2NK70Z-1 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 8/12 STD2NK70Z - STD2NK70Z-1 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H A C C2 L D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences L2 of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. B3 B6 A1 The ST logo is a registered trademark of STMicroelectronics = = 3 B5 B A3 = B2 = G = E STMicroelectronics group of companies L1 Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 0068771-E www.st.com 1 (c) 2005 STMicroelectronics - All Rights Reserved 2 All other names are the property of their respective owners = 9/12 STD2NK70Z - STD2NK70Z-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 * on sales type 10/12 STD2NK70Z - STD2NK70Z-1 Table 10: Revision History Date 07-Sep-2004 24-Jan-2005 Revision 1 2 Description of Changes First Release, complete document. New curve, figure 3, and new Rds(on) value Max. 11/12 STD2NK70Z - STD2NK70Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 |
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